SMBD914_07 datasheet(2/6 Pages) INFINEON

No. de pieza	SMBD914

Descripción Electrónicos	Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101

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Fabricante Electrónico	INFINEON [Infineon Technologies AG]

Página de inicio	http://www.infineon.com

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2 / 6 page

2007-03-28

2

SMBD914/MMBD914...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Breakdown voltage

I(BR) = 100 µA

V(BR)

100

-

V

Reverse current

VR = 20 V

VR = 75 V

VR = 20 V, TA = 150 °C

VR = 75 V, TA = 150 °C

IR

-

0.025

0.1

30

50

µA

Forward voltage

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 100 mA

IF = 150 mA

VF

-

715

855

1000

1200

1250

mV

AC Characteristics

Diode capacitance

VR = 0 V, f = 1 MHz

CT

-

2

pF

Reverse recovery time

IF = 10 mA, IR = 10 mA, measured at IR = 1mA ,

RL = 100 Ω

trr

-

4

ns

Test circuit for reverse recovery time

EHN00019

Ι

F

D.U.T.

Oscillograph

Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns,

Ri = 50Ω

Oscillograph: R = 50

Ω, t

r = 0.35ns, C ≤ 1pF

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