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FP215 Datasheet(PDF) 1 Page - Sanyo Semicon Device

No. de pieza FP215
Descripción Electrónicos  High-Frequency Amp, Differential Amp Applications
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Fabricante Electrónico  SANYO [Sanyo Semicon Device]
Página de inicio  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

FP215 Datasheet(HTML) 1 Page - Sanyo Semicon Device

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52098HA (KT)/41594HO (KOTO) BX-0352 No.4698-1/3
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Composite Transistors
High-Frequency Amp,
Differential Amp Applications
Ordering number:EN4698
FP215
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Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2108A
[FP215]
Features
· Composite type with 2 transistors contained in the
PCP package currently in use, improving the mount-
ing efficiency greatly.
· The FP215 is formed with two chips, being equiva-
lent to the 2SA1724, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
Note:The specifications shown above are for individual transistor.
However, the DC Current Gain Ratio and Base-to-Emitter Voltage Difference are for the paired transistors.
Marking:215
˚C
Mounted on ceramic board (250mm2
×0.8mm) 1 unit
˚C
Electrical Characteristics at Ta=25˚C
Mounted on ceramic board (250mm2
×0.8mm)
1:Base (PNP TR)
2:Collector (PNP TR)
3:Emitter Common
4:Collector (PNP TR)
5:Base (PNP TR)
6:Collector (PNP TR)
7:Collector (PNP TR)
SANYO:PCP5
(Bottom view)
1:Base (PNP TR)
2:Collector (PNP TR)
3:Emitter Common
4:Collector (PNP TR)
5:Base (PNP TR)
6:Collector (PNP TR)
7:Collector (PNP TR)
(Top view)
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