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FP215 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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FP215 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 3 page 52098HA (KT)/41594HO (KOTO) BX-0352 No.4698-1/3 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN PNP Epitaxial Planar Silicon Composite Transistors High-Frequency Amp, Differential Amp Applications Ordering number:EN4698 FP215 r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s a B - o t - r o t c e ll o CV O B C 0 3 –V e g a t l o V r e t t i m E - o t - r o t c e ll o CV O E C 0 2 –V e g a t l o V e s a B - o t - r e t t i m EV O B E 3 –V t n e r r u C r o t c e ll o CIC 0 0 3 –A m ) e s l u P ( t n e r r u C r o t c e ll o CI P C 0 0 6 –A m n o i t a p i s s i D r o t c e ll o CPC 5 7 . 0W n o i t a p i s s i D l a t o TPT 0 . 1W e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 2108A [FP215] Features · Composite type with 2 transistors contained in the PCP package currently in use, improving the mount- ing efficiency greatly. · The FP215 is formed with two chips, being equiva- lent to the 2SA1724, placed in one package. · Excellent in thermal equilibrium and pair capability. Electrical Connection Note:The specifications shown above are for individual transistor. However, the DC Current Gain Ratio and Base-to-Emitter Voltage Difference are for the paired transistors. Marking:215 ˚C Mounted on ceramic board (250mm2 ×0.8mm) 1 unit ˚C Electrical Characteristics at Ta=25˚C Mounted on ceramic board (250mm2 ×0.8mm) 1:Base (PNP TR) 2:Collector (PNP TR) 3:Emitter Common 4:Collector (PNP TR) 5:Base (PNP TR) 6:Collector (PNP TR) 7:Collector (PNP TR) SANYO:PCP5 (Bottom view) 1:Base (PNP TR) 2:Collector (PNP TR) 3:Emitter Common 4:Collector (PNP TR) 5:Base (PNP TR) 6:Collector (PNP TR) 7:Collector (PNP TR) (Top view) r e t e m a r a Pl o b m y Ss n o t i d n o C s g n i t a R t i n U n i mp y tx a m t n e r r u C f f o t u C r o t c e ll o CI O B C V B C I , V 0 2 – = E 0 =1 . 0 –A µ t n e r r u C f f o t u C r e t t i m EI O B E V B E I , V 2 – = C 0 =0 . 1 –A µ n i a G t n e r r u C C D h E F 1V E C I , V 5 – = C A m 0 5 – =5 10 0 1 h E F 2V E C I , V 5 – = C A m 0 0 0 3 – =5 o i t a R n i a G t n e r r u C C Dh E F 1 ) e g r a l - ll a m s ( V E C I , V 5 – = C A m 0 5 – =6 . 03 9 . 0 e c n e r e f f i D e g a t l o V r e t t i m E - o t - e s a BV E B ) ll a m s - e g r a l ( V E C I , V 5 – = C A m 0 0 1 – =0 . 35 2 V m t c u d o r P h t d i w d n a B - n i a GfT V E C I , V 5 – = C A m 0 5 – = 5 . 1z H G e c n a t i c a p a C t u p t u Ob o CV B C z H M 1 = f , V 0 1 – = 9 . 4F p e c n a t i c a p a C r e f s n a r T e s r e v e Re r CV B C z H M 1 = f , V 0 1 – = 4 . 4F p e g a t l o V n o i t a r u t a S E - CV ) t a s ( E C IC I , A m 0 0 1 – = B A m 0 1 – = 4 . 0 –0 . 1 –V e g a t l o V n o i t a r u t a S E - BV ) t a s ( E B IC I , A m 0 0 1 – = B A m 0 1 – =9 . 0 –2 . 1 –V |
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