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TEA1522T Datasheet(PDF) 11 Page - NXP Semiconductors

No. de pieza TEA1522T
Descripción Electrónicos  SMPS ICs for low-power systems
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Fabricante Electrónico  NXP [NXP Semiconductors]
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TEA1522T Datasheet(HTML) 11 Page - NXP Semiconductors

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TEA152X
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 14 September 2010
11 of 20
NXP Semiconductors
TEA152x
SMPS ICs for low-power systems
Valley switching
(
ΔV/Δt)
vrec
valley recognition voltage
change with time
−102 -
+102 V/
μs
fvalley
ringing frequency for valley
switching
N
× V
o = 100 V
200
550
800
kHz
td(vrec-swon)
valley recognition to
switch-on delay time
-150
-
ns
Current and short-circuit winding protection
Vsource(max)
maximum voltage on pin
SOURCE
ΔV/Δt=0.1V/μs
0.470.500.53
V
td(prop)
delay from detecting
Vsource(max) to switch-off
ΔV/Δt=0.5V/μs
-
160
185
ns
Vswp
short-winding protection
voltage
ΔV/Δt=0.5V/μs
0.7
0.75
0.8
V
tleb
leading edge blanking time
250
350
450
ns
FET output stage
IL(drain)
leakage current on pin
DRAIN
Vdrain = 650 V
-
-
125
μA
VBR(DRAIN)
breakdown voltage on pin
DRAIN
Tj >0 °C
650
-
-
V
RDSon
drain-source on-state
resistance
TEA1520x
Isource = −0.06 A
Tj =25 °C
-
48
55.2
Ω
Tj =100 °C
-
68
78.2
Ω
TEA1521x
Isource = −0.125 A
Tj =25 °C
-
24
27.6
Ω
Tj =100 °C
-
34
39.1
Ω
TEA1522x
Isource = −0.25 A
Tj =25 °C
-
12
13.8
Ω
Tj =100 °C
-
17
19.6
Ω
TEA1523P
Isource = −0.50 A
Tj =25 °C-
6.5
7.5
Ω
Tj =100 °C
-
9.0
10.0
Ω
tf(DRAIN)
fall time on pin DRAIN
Vi =300 V;
no external capacitor
at drain
-75
-
ns
Temperature protection
Tprot(max)
maximum threshold
temperature
150
160
170
°C
Tprot(hys)
hysteresis of protection
temperature
-2
-
°C
Table 6.
Characteristics …continued
Tamb =25 °C; no overtemperature; all voltages are measured with respect to ground; currents are
positive when flowing into the IC; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit


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