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FDD3860 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDD3860 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page www.fairchildsemi.com 2 ©2008 Fairchild Semiconductor Corporation FDD3860 Rev.C1 Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 100 V ∆BV DSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C 98 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2.5 3.8 4.5 V ∆V GS(th) ∆T J Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -11.4 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 5.9A 29 36 m Ω VGS = 10V, ID = 5.9A, TJ = 125°C 51 64 gFS Forward Transconductance VDS = 10V, ID = 5.9A 20 S Dynamic Characteristics Ciss Input Capacitance VDS = 50V, VGS = 0V, f = 1MHz 1310 1740 pF Coss Output Capacitance 100 130 pF Crss Reverse Transfer Capacitance 45 70 pF Rg Gate Resistance f = 1MHz 1.6 Ω Switching Characteristics td(on) Turn-On Delay Time VDD = 50V, ID = 5.9A, VGS = 10V, RGEN = 6Ω 16 29 ns tr Rise Time 10 21 ns td(off) Turn-Off Delay Time 24 39 ns tf Fall Time 7 15 ns Qg Total Gate Charge at 10V VDD = 50V, ID = 5.9A 22 31 nC Qgs Gate to Source Charge 7.1 nC Qgd Gate to Drain “Miller” Charge 6.3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 2.0A (Note 2) 0.7 1.2 V VGS = 0V, IS = 5.9A (Note 2) 0.8 1.3 trr Reverse Recovery Time IF = 5.9A, di/dt = 100A/µs 34 55 ns Qrr Reverse Recovery Charge 40 64 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 100V, VGS = 10V. 40°C/W when mounted on a 1 in2 pad of 2 oz copper 96°C/W when mounted on a minimum pad. a) b) |
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Descripción similar - FDD3860 |
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