BAP55LX_10 datasheet(3/9 Pages) NXP

No. de pieza	BAP55LX

Descripción Electrónicos	Silicon PIN diode High speed switching for RF signals

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BAP55LX

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Product data sheet

Rev. 2 — 16 December 2010

3 of 9

NXP Semiconductors

BAP55LX

Silicon PIN diode

ISL

isolation

see Figure 3;VR =0 V;

f = 900 MHz

-

19

-

dB

f = 1800 MHz

-

14

-

dB

f = 2450 MHz

-

12

-

dB

Lins

insertion loss

see Figure 4;IF =0.5 mA;

f = 900 MHz

-

0.24

-

dB

f = 1800 MHz

-

0.25

-

dB

f = 2450 MHz

-

0.26

-

dB

Lins

insertion loss

see Figure 4;IF =1mA;

f = 900 MHz

-

0.17

-

dB

f = 1800 MHz

-

0.18

-

dB

f = 2450 MHz

-

0.19

-

dB

Lins

insertion loss

see Figure 4;IF =10mA;

f = 900 MHz

-

0.08

-

dB

f = 1800 MHz

-

0.09

-

dB

f = 2450 MHz

-

0.10

-

dB

Lins

insertion loss

see Figure 4;IF = 100 mA;

f = 900 MHz

-

0.05

-

dB

f = 1800 MHz

-

0.07

-

dB

f = 2450 MHz

-

0.08

-

dB



L

charge carrier life time

when switched from IF =10mA to

IR =6mA; RL = 100 ; measured at

IR =3mA

0.225

0.27

-

s

LS

series inductance

IF = 100 mA; f = 100 MHz

-

0.4

-

nH

Table 6.

Characteristics …continued

Tamb = 25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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