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BAP55LX Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAP55LX Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 9 page BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 — 16 December 2010 3 of 9 NXP Semiconductors BAP55LX Silicon PIN diode ISL isolation see Figure 3;VR =0 V; f = 900 MHz - 19 - dB f = 1800 MHz - 14 - dB f = 2450 MHz - 12 - dB Lins insertion loss see Figure 4;IF =0.5 mA; f = 900 MHz - 0.24 - dB f = 1800 MHz - 0.25 - dB f = 2450 MHz - 0.26 - dB Lins insertion loss see Figure 4;IF =1mA; f = 900 MHz - 0.17 - dB f = 1800 MHz - 0.18 - dB f = 2450 MHz - 0.19 - dB Lins insertion loss see Figure 4;IF =10mA; f = 900 MHz - 0.08 - dB f = 1800 MHz - 0.09 - dB f = 2450 MHz - 0.10 - dB Lins insertion loss see Figure 4;IF = 100 mA; f = 900 MHz - 0.05 - dB f = 1800 MHz - 0.07 - dB f = 2450 MHz - 0.08 - dB L charge carrier life time when switched from IF =10mA to IR =6mA; RL = 100 ; measured at IR =3mA 0.225 0.27 - s LS series inductance IF = 100 mA; f = 100 MHz - 0.4 - nH Table 6. Characteristics …continued Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit |
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