SILICON DUAL MATCHED

NPN TRANSISTORS

BFY81

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8502

Issue 1

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ.

Max.

Units

V(BR)CBO

Collector-Base Breakdown

Voltage

IC = 10µA

IE = 0

45

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = 10mA

IB = 0

45

V(BR)EBO

Emitter-Base Breakdown

Voltage

IE = 10µA

IC = 0

6

V

VCB = 40V

IE = 0

10

nA

ICBO

Collector Cut-Off Current

TA = 150°C

10

µ

A

IEBO

Emitter-Cut-Off Current

VEB = 5V

IC = 0

10

ICEO

Collector-Cut-Off Current

VCE = 5V

IB = 0

10

nA

VCE(sat)

(1)

Collector-Emitter

Saturation Voltage

IC = 1.0mA

IB = 0.1mA

0.35

VBE(on)

Base-Emitter On Voltage

IC = 100µA

VCE = 5V

0.7

V

IC = 10µA

VCE = 5V

60

IC = 100µA

VCE = 5V

100

hFE

(1)

Forward-current transfer

ratio

IC = 1.0mA

VCE = 5V

150

ELECTRICAL MATCHING CHARACTERISTICS

2

FE

h

1

FE

h

(2)

Forward-current transfer

ratio (gain ratio)

IC = 100µA

VCE = 5V

0.8

1.0

|VBE1-VBE2|

Base-Emitter Voltage

Differential

IC = 100µA

VCE = 5V

10

mV

|∆(VBE1-VBE2)∆TA|

(3)

Base-Emitter Voltage

Differential Change Due

To Temperature

IC = 100µA

VCE = 5V

25

µ

V/°C

DYNAMIC CHARACTERISTICS

IC = 500µA

VCE = 5V

| hfe |

Small signal forward-

current transfer ratio

f = 30MHz

2

VCB = 5V

IE = 0

Cobo

Output Capacitance

f = 1.0MHz

6

pF

IC = 10µA

VCE = 5V

NF

(3)

Noise Figure

f = 1.0KHz

4

dB

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%

(2)

The lower of the two readings is taken as hFE1

(3)

By design only, not a production test