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STD100N3LF3 Datasheet(PDF) 5 Page - STMicroelectronics |
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STD100N3LF3 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 14 page STD100N3LF3 Electrical characteristics Doc ID 13206 Rev 3 5/14 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD= 15 V, ID= 40 A, RG=4.7Ω, VGS=10 V Figure 15 on page 9 - 9 205 31 35 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current - 80 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 320 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 40 A, VGS = 0 - 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C Figure 17 on page 9 - 40 40 2 ns µC A |
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