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2SA1241 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SA1241 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page 2SA1241 2009-12-21 4 Base-emitter voltage VBE (V) IC – VBE Ambient temperature Ta (°C) PC – Ta Collector-emitter voltage VCE (V) Safe Operating Area 0 0 Common emitter VCE = −2 V 25 −55 Tc = 100°C −2.0 −0.4 −0.8 −1.2 −1.6 −2.0 −0.5 −1.0 −1.5 12 0 0 (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 25 50 75 100 125 150 175 2 4 6 8 10 (1) (2) (3) *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −0.01 −0.5 −5 IC max (continuous) IC max (pulsed)* VCEO max 1 ms* 10 ms* 100 ms* DC operation thermal limited S/B limited −30 −100 −5 −10 −1 −3 −0.03 −0.05 −0.1 −0.3 −0.5 −1 −3 −50 |
Número de pieza similar - 2SA1241_09 |
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Descripción similar - 2SA1241_09 |
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