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2SC3419 Datasheet(PDF) 1 Page - Toshiba Semiconductor

No. de pieza 2SC3419
Descripción Electrónicos  Medium-Power Amplifier Applications
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3419 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SC3419
2004-07-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3419
Medium-Power Amplifier Applications.
• Low saturation voltage: VCE (sat) = 0.25 V (typ.)
(IC = 500 mA, IB = 50 mA)
• High collector power dissipation: PC = 1.2 W (Ta = 25°C)
• Complementary to 2SA1356
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
80
mA
Ta = 25°C
1.2
Collector power
dissipation
Tc = 25°C
PC
5
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 40 V, IE = 0
1.0
µA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
1.0
µA
Collector-emitter breakdown voltage
VCEO
IC = 10 mA, IB = 0
40
V
hFE (1)
(Note)
VCE = 2 V, IC = 50 mA
70
240
DC current gain
hFE (2)
VCE = 2 V, IC = 0.8 A
13
60
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 50 mA
0.25
0.8
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 500 mA
0.90
1.1
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
50
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)


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