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2SC3668 Datasheet(PDF) 4 Page - Toshiba Semiconductor

No. de pieza 2SC3668
Descripción Electrónicos  Power Amplifier Applications Power Switching Applications
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3668 Datasheet(HTML) 4 Page - Toshiba Semiconductor

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2SC3668
2004-07-07
4
Base-emitter voltage VBE (V)
IC – VBE
Ambient temperature Ta (°C)
PC – Ta
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
VBE (sat) – IC
0
0
0.2
0.4
0.6
0.8
1.0
1.2
20
40
60
100
120
140
160
80
0.1
0.01
0.03
0.1
0.3
1
0.3
0.5
3
5
Ta = −55°C
25
Common emitter
IC/IB = 20
100
2
1
5
0.003
0.005
0.01
0.03
0.05
0.1
0.3
0.5
1
3
0.3
1
3
10
30
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature
IC max
(continuous)
IC max (pulsed)*
1 ms*
10 ms*
100 ms*
DC operation
Ta = 25°C
1 s*
100
0.1
0
2.0
0.4
0.5
1.0
1.5
0.8
1.2
1.6
2.0
Common emitter
VCE = 2 V
25
Ta = 100°C
−55
0


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