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DZT491-13 Datasheet(PDF) 1 Page - Diodes Incorporated |
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DZT491-13 Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 4 page DS30946 Rev. 3 - 2 1 of 4 www.diodes.com DZT491 © Diodes Incorporated DZT491 NPN SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DZT591C) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT-223 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish - Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Marking & Type Code Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.115 grams (approximate) 2 3 4 1 SOT-223 4 3 2 1 C C B E 3 1 2,4 BASE COLLECTOR EMITTER TOP VIEW Schematic and Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Collector Continuous Current (Note 3) IC 1 A Peak Collector Current ICM 2 A Base Current IB 200 mA Power Dissipation (Note 3) Pd 1 W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Cutoff Current ICBO ⎯ ⎯ 100 nA VCB = 60V Emitter-Base Cutoff Current IEBO ⎯ ⎯ 100 nA VEB = 4V Collector-Emitter Cutoff Current ICES ⎯ ⎯ 100 nA VCES = 60V Collector-Base Breakdown Voltage V(BR)CBO 80 ⎯ ⎯ V IC = 100μA Collector-Emitter Breakdown Voltage V(BR)CEO 60 ⎯ ⎯ V IC = 10mA Emitter-Base Breakdown Voltage V(BR)EBO 5 ⎯ ⎯ V IE = 100μA ON CHARACTERISTICS (Note 4) ⎯ ⎯ 0.25 V IC = 500mA, IB = 50mA Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ 0.5 V IC = 1A, IB = 100mA 100 ⎯ ⎯ ⎯ VCE = 5V, IC = 1mA 100 ⎯ 300 ⎯ VCE = 5V, IC = 500mA 80 ⎯ ⎯ ⎯ VCE = 5V, IC = 1A DC Current Gain hFE 30 ⎯ ⎯ ⎯ VCE = 5V, IC = 2A Base-Emitter Saturation Voltage VBE(SAT) ⎯ ⎯ 1.1 V IC = 1A, IB = 100mA Base-Emitter Turn-On Voltage VBE(on) ⎯ ⎯ 1 V IC = 1A, VCE = 5V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT 150 ⎯ ⎯ MHz VCE = 10V, IC = 50mA, f = 100MHz Output Capacitance Cobo ⎯ ⎯ 10 pF VCB = 10V, IE = 0A, f =1MHz Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Measured under pulsed conditions. Pulse width = 300ms duty cycle ≤ 2% |
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