DMG4800LSD

Document number: DS31858 Rev. 3 - 2

2 of 6

www.diodes.com

October 2009

© Diodes Incorporated

DMG4800LSD

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

30

-

-

V

-

-

1.0

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.8

-

1.6

V

Static Drain-Source On-Resistance

-

12

16

16

22

m

Ω

Forward Transfer Admittance

-

8

-

S

Diode Forward Voltage

-

0.72

0.94

V

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

-

798

-

pF

f = 1.0MHz

Output Capacitance

-

128

-

pF

Reverse Transfer Capacitance

-

122

-

pF

Gate Resistance

-

1.37

-

Ω

Total Gate Charge

-

8.56

-

nC

Gate-Source Charge

-

1.8

-

nC

Gate-Drain Charge

-

2.5

-

nC

Turn-On Delay Time

-

5.03

-

ns

Turn-On Rise Time

-

4.50

-

ns

Turn-Off Delay Time

-

26.33

-

ns

Turn-Off Fall Time

-

8.55

-

ns

Notes:

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

0

0.5

1

1.5

2

Fig. 1 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

0

5

10

15

20

30

25

V

= 2.0V

GS

V

= 3.0V

GS

V

= 4.5V

GS

V

= 10V

GS

V

= 2.5V

GS

0

0.5

1

1.5

2

2.5

3

3.5

4

Fig. 2 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

0

5

10

15

20

25

30

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 5V

DS