DMG6898LSD datasheet(4/6 Pages) DIODES

No. de pieza	DMG6898LSD

Descripción Electrónicos	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Fabricante Electrónico	DIODES [Diodes Incorporated]

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DMG6898LSD

Document number: DS31947 Rev. 3 - 2

4 of 6

www.diodes.com

June 2010

DMG6898LSD

0

200

400

600

800

1,000

1,200

1,400

1,600

1,800

0

5

10

15

20

Fig. 9 Typical Total Capacitance

V

, DRAIN-SOURCE VOLTAGE (V)

DS

C

iss

C

rss

C

oss

0

2

4

6

8

10

1214

1618

20

Fig. 10 Typical Leakage Current

vs. Drain-Source Voltage

V

, DRAIN-SOURCE VOLTAGE (V)

DS

1

10

100

1,000

10,000

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0

2

4

6

8

10

04

8

12

16

20

24

28

V

= 10V

I = 9.4A

DS

D

Q , OTAL GATE CHARGE (nC)

Fig. 11 Gate-Source Voltage vs. Total Gate Charge

g T

0.001

0.01

0.1

1

10

100

1,000

Fig. 12 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

0.0001

0.001

0.01

0.1

1

T - T = P * R

(t)

Duty Cycle, D = t /t

JA

12

θ

R

(t) = r(t) *

θJA

R

= 205°C/W

θ

JA

P(pk)

t

1

t

2

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5

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