DMG4466SSS

Document number: DS32137 Rev. 3 - 2

1 of 6

www.diodes.com

September 2010

© Diodes Incorporated

DMG4466SSS

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

•

Low On-Resistance

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Low Gate Resistance

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SO-8

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminal Connections: See Diagram Below

•

Marking Information: See Page 5

•

Ordering Information: See Page 5

•

Weight: 0.072 grams (approximate)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

±25

V

Continuous Drain Current (Note 3)

Steady

State

10

6

A

Pulsed Drain Current (Note 4)

60

A

Avalanche Current (Notes 4 & 5)

16

A

Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH

12.8

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 3)

1.42

W

88.4

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

application depends on the

user's specific board design.

4. Repetitive rating, pulse width limited by junction temperature.

SO-8

TOP VIEW

Internal Schematic

TOP VIEW

S

D

D

G

D

D

S

S