ESD3V3U4ULC datasheet(9/18 Pages) INFINEON

No. de pieza	ESD3V3U4ULC

Descripción Electrónicos	Transient Voltage Suppressor Diodes

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ESD3V3U4ULC

Characteristics

Preliminary Data Sheet

9

Revision 0.9, 2010-10-14

Table 4

RF characteristics at

T

A = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Line capacitance

C

L

–

0.4

0.65

pF

V

R = 0 V, f = 1 MHz,

I/O to

GND

–

0.2

0.35

pF

V

R = 0V, f = 1 MHz,

I/O to I/O

Table 5

ESD characteristics at

T

A = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Reverse clamping

voltage

1) [2]

1) Please refer to Application Note AN210. TLP parameter: Z

0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns

to t

2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistic between IPP1 = 10 A and

I

PP2 =40A.

V

CL

–9–V

I

PP = 16 A

–12

–

V

I

PP = 30 A

Forward clamping

voltage

1) [2]

V

FC

–6–V

I

PP = 16 A

–10

–

V

I

PP = 30 A

Reverse dynamic

resistance

1) [2]

R

dyn, rev

–0.2

–

Ω

Forward dynamic

resistance

1)[2]

R

dyn, fwd

–0.25

–

Ω

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