Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

LC35W1000BTS-10U Datasheet(PDF) 8 Page - Sanyo Semicon Device

No. de pieza LC35W1000BTS-10U
Descripción Electrónicos  Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  SANYO [Sanyo Semicon Device]
Página de inicio  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LC35W1000BTS-10U Datasheet(HTML) 8 Page - Sanyo Semicon Device

  LC35W1000BTS-10U Datasheet HTML 1Page - Sanyo Semicon Device LC35W1000BTS-10U Datasheet HTML 2Page - Sanyo Semicon Device LC35W1000BTS-10U Datasheet HTML 3Page - Sanyo Semicon Device LC35W1000BTS-10U Datasheet HTML 4Page - Sanyo Semicon Device LC35W1000BTS-10U Datasheet HTML 5Page - Sanyo Semicon Device LC35W1000BTS-10U Datasheet HTML 6Page - Sanyo Semicon Device LC35W1000BTS-10U Datasheet HTML 7Page - Sanyo Semicon Device LC35W1000BTS-10U Datasheet HTML 8Page - Sanyo Semicon Device LC35W1000BTS-10U Datasheet HTML 9Page - Sanyo Semicon Device  
Zoom Inzoom in Zoom Outzoom out
 8 / 9 page
background image
Notes: 1. The times tCOD1, tCOD2, tOOD, and tWOD are stipulated as the times until the output reaches the high-impedance
state. They are not stipulated by output voltage level.
2. Do not apply reverse phase signals to the data outputs when the data outputs are in the output state.
3. tWP is the period that CE1 and WE are at the low level and CE2 is at the high level, and is defined as the time
from the fall of WE until the rise of CE1 or WE or the fall of CE2, whichever occurs first.
4. tCW1 and tCW2 are the period that CE1 and WE are at the low level and CE2 is at the high level, and are defined
as the time from the fall of CE1 or the rise of CE2 to the rise of either CE1 or WE or the fall of CE2, whichever
occurs first.
5. The data outputs go to the high-impedance state when any one of the following states hold: OE is at the high
level, CE1 is at the high level, CE2 is at the low level, or WE is at the low level.
6. If OE is at the high level during the write cycle, the data outputs will go to the high-impedance state.
No. 6624-8/9
LC35W1000BM, BTS-70U/10U
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Data retention supply voltage
VDR1
VCE1 ≥ VCC – 0.2 V, VCE2 ≥ VCC – 0.2 V or VCE2 ≤ 0.2 V
2.0
3.6
V
VDR2
VCE2 ≤ 0.2 V
2.0
3.6
V
VCC = 3.0 V, VCE1 ≥ VCC – 0.2 V,
–40°C to +85°C
16
Data retention supply current
ICCDR1
VCE2 ≥ VCC – 0.2 V,
–40°C to +70°C
8
µA
or VCE2 ≤ 0.2 V
+25°C
0.1
Chip enable setup time
tCDR
0
ns
Chip enable hold time
tR
5
ms
Data Retention Characteristics at Ta = –40 to +85°C
Data Retention Waveforms (1) (CE1 control)
Note: * Ta = +25°C
Data retention mode
A13494
Data Retention Waveforms (2) (CE2 control)
Data retention mode
A13495


Número de pieza similar - LC35W1000BTS-10U

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Sanyo Semicon Device
LC35W256EM SANYO-LC35W256EM Datasheet
46Kb / 6P
   256K (32K words x 8 bits) SRAM Control pins: OE and CE
LC35W256EM-10W SANYO-LC35W256EM-10W Datasheet
46Kb / 6P
   256K (32K words x 8 bits) SRAM Control pins: OE and CE
LC35W256ET-10W SANYO-LC35W256ET-10W Datasheet
46Kb / 6P
   256K (32K words x 8 bits) SRAM Control pins: OE and CE
More results

Descripción similar - LC35W1000BTS-10U

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Sanyo Semicon Device
LC35V1000BM SANYO-LC35V1000BM Datasheet
178Kb / 9P
   Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
LC36128ML-70 SANYO-LC36128ML-70 Datasheet
130Kb / 7P
   128K(16384 words X 8 bits) SRAM?
logo
GSI Technology
GS78108B GSI-GS78108B Datasheet
210Kb / 10P
   1M x 8 8Mb Asynchronous SRAM
logo
Sanyo Semicon Device
LC3564S SANYO-LC3564S Datasheet
239Kb / 10P
   64K (8192 words x 8 bits) SRAM?
LC3564RM SANYO-LC3564RM Datasheet
442Kb / 10P
   64K (8192 words x 8 bits) SRAM
logo
GSI Technology
GS78108AB GSI-GS78108AB Datasheet
642Kb / 11P
   1M x 8 8Mb Asynchronous SRAM
logo
Sanyo Semicon Device
LC36256ALL SANYO-LC36256ALL Datasheet
142Kb / 7P
   256 K (32768 words x 8 bits) SRAM?
logo
Elpida Memory
EDS1616AGTA ELPIDA-EDS1616AGTA Datasheet
694Kb / 49P
   16M bits SDRAM (1M words x 16 bits)
logo
Sanyo Semicon Device
LC33864P-80 SANYO-LC33864P-80 Datasheet
192Kb / 10P
   512K (65536 words X 8 bits) Pseudo-SRAM
LC361000AMLL SANYO-LC361000AMLL Datasheet
158Kb / 8P
   1 MEG (131072 words X 8 bits) SRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com