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2SD1415A Datasheet(PDF) 2 Page - Toshiba Semiconductor

No. de pieza 2SD1415A
Descripción Electrónicos  High-Power Switching Applications
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD1415A Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SD1415A
2009-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0
100
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.75
3.0
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
100
V
hFE (1)
VCE = 3 V, IC = 3 A
2000
15000
DC current gain
hFE (2)
VCE = 3 V, IC = 6 A
1000
Collector-emitter saturation voltage
VCE (sat)
IC = 3 A, IB = 6 mA
0.9
1.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 3 A, IB = 6 mA
1.5
2.0
V
Turn-on time
ton
0.3
Storage time
tstg
5.1
Switching time
Fall time
tf
IB1 = 6 mA,IB2 = 6 mA
duty cycle ≤ 1%
0.6
μs
Marking
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
20 μs
VCC ≈ 45 V
Output
IB2
IB1
Input
Lot No.
Note 2
D1415A
Part No. (or abbreviation code)


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