2SD1947A datasheet(4/5 Pages) TOSHIBA

No. de pieza	2SD1947A

Descripción Electrónicos	High-Current Switching Applications

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

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2SD1947A

2006-11-21

4

Safe Operating Area

Collector-emitter voltage VCE (V)

Collector current IC (A)

VBE (sat) – IC

Base-emitter voltage VBE (V)

IC – VBE

0

4

8

12

16

0.4

0.8

1.2

1.6

2.0

Common emitter

VCE = 1 V

−55

25

Tc = 100°C

0.1

Common emitter

IC/IB = 100

0.3 0.5

1

3

5

10

30

0.3

0.5

1

3

5

10

100

25

Tc = −55°C

1

3

5

10

30

50

100

300

0.05

0.1

0.3

0.5

1

3

5

10

30

*: Single nonrepetitive pulse

Tc = 25°C

Curves must be derated

linearly with increase in

temperature.

10 ms*

100 μs*

IC max (pulsed)*

IC max

(continuous)

100 ms*

1 ms*

DC operation

Tc = 25°C

VCEO max

Pulse width tw (s)

rth – tw

0.001

1000

10

100

0.01

0.1

30

0.3

3

1

100

10

1

0.1

Curves should be applied in thermal limited area.

(single nonrepetitive pulse)

(1) Infinite heat sink (Tc = 25°C)

(2) No heat sink

(1)

(2)

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2SD1947A Datasheet(PDF) 4 Page - Toshiba Semiconductor

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