2SD2257

2006-11-21

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SD2257

High-Power Switching Applications

Hammer Drive, Pulse Motor Drive Applications

• Complementary to 2SB1495

Characteristics

Symbol

Rating

Unit

Collector-base voltage

100

V

Collector-emitter voltage

100

V

Emitter-base voltage

8

V

DC

±3

Collector current

Pulse

±5

A

Base current

0.3

A

Ta = 25°C

2.0

Collector power

dissipation

Tc = 25°C

20

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

Unit: mm

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)

Base

Emitter

≈ 4 kΩ

≈ 800 Ω

Collector