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SIA921EDJ Datasheet(PDF) 5 Page - Vishay Siliconix |
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SIA921EDJ Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 7 page Document Number: 64734 S09-2310-Rev. B, 02-Nov-09 www.vishay.com 5 Vishay Siliconix SiA921EDJ TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 µs Limited byRDS(on)* BVDSS Limited 1ms 10 ms 100 ms 1s,10s DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Current Derating* 0 2 4 6 8 10 12 0 255075 100 125 150 Package Limited TC - Case Temperature (°C) Power Derating 0 2 4 6 8 25 50 75 100 125 150 TC - Case Temperature (°C) |
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