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3N50 Datasheet(PDF) 3 Page - Unisonic Technologies |
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3N50 Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 3N50 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-530.a ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V 1 µA Forward VGS=+30V, VDS=0V +100 nA Gate- Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.5A 2.1 2.5 Ω DYNAMIC PARAMETERS Input Capacitance CISS 280 365 pF Output Capacitance COSS 50 65 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=25V, f=1.0MHz 8.5 11 pF SWITCHING PARAMETERS Total Gate Charge QG 10 13 nC Gate to Source Charge QGS 1.5 nC Gate to Drain Charge QGD VGS=10V, VDS=400V, ID=3A (Note 4, 5) 5.5 nC Turn-ON Delay Time tD(ON) 10 30 ns Rise Time tR 25 60 ns Turn-OFF Delay Time tD(OFF) 35 80 ns Fall-Time tF VDD=250V, ID=3A, RG=25Ω (Note 4, 5) 25 60 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 3 A Maximum Body-Diode Pulsed Current ISM 12 A Drain-Source Diode Forward Voltage VSD IS=3A, VGS=0V 1.4 V Body Diode Reverse Recovery Time tRR 170 ns Body Diode Reverse Recovery Charge QRR IS=3A, VGS=0V, dIF/dt=100A/µs (Note 4) 0.7 µC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 40mH, IAS = 3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature |
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