FDS3670 datasheet(9/12 Pages) FAIRCHILD

No. de pieza	FDS3670

Descripción Electrónicos	Power Converter Topology and MOSFET Selection for 48-V Telecom

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Fabricante Electrónico	FAIRCHILD [Fairchild Semiconductor]

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9 / 12 page

9

Rev. A, June 2001

levels approaching 390 watts are theoretically possible. Paralleling FETs allows this number to

be increased. The output waveforms of the bridge design look the same as the push pull. The

FET drain voltages are depicted in Figure 11.

Figure 10. The basic circuit design for a full-bridge regulator topology.

Figure 11. Voltage and current waveforms for the full-bridge regulator.

D1

D2

L1

T1

Q2

Q4

Q1

VIN

Gate 1

Gate

U1

PWM

Gate

Input 1

Isolation

Input 2

GND

Source 1

Gate 2

Source 2

RTN

C2

+

C1

+

VOUT

Q3

VGS(Q2&Q3)

VGS(Q1&Q4)

PWM'ED EDGE

Can vary from

0 to VIN

-VIN

VDS(Q1&Q4)

VDS(Q2&Q3)

VSW2

VSAT

IPK

0

2

TIME

SW

1-4

SW

2-3

VIN

ISW2

0

TIME

IMIN

Can vary from

0 to VIN

-VIN

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FDS3670 Datasheet(PDF) 9 Page - Fairchild Semiconductor

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