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SB350 Datasheet(PDF) 5 Page - Fairchild Semiconductor

No. de pieza SB350
Descripción Electrónicos  Power Switch (FPSTM) FSBH-series to Standby Auxiliary Power Supply
Download  10 Pages
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

SB350 Datasheet(HTML) 5 Page - Fairchild Semiconductor

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AN-8024
APPLICATION NOTE
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev. 1.0.1 • 9/18/09
5
(Design Example)
EEL-19 core is selected, whose
effective cross-sectional area is 25mm
2. Choosing the
saturation flux density as 0.3 T, the minimum number
of turns for the primary side is obtained as:
min
6
6
6
10
900 10
1.2
10
144
0.3 25
MLIM
P
SAT
e
LI
N
BA
×⋅
=
[STEP-7] Determine the Number of Turns for Each
Winding
Figure 6 shows the simplified diagram of the transformer.
First, calculate the turn ratio (n) between the primary side
and the secondary side from the reflected output voltage,
determined in step 3, as:
RO
P
SO
F
V
N
n
NV
V
==
+
(13)
where NP and NS are the number of turns for primary side
and secondary side, respectively; VO is the output voltage;
and VF is the diode (DO) forward-voltage drop. Then,
determine the proper integer for NS, such that the resulting
NP is larger than NP
min obtained from Equation (12).
The number of turns for the auxiliary winding for VDD
supply is determined as:
*
1
DD
FA
AS
OF
VV
NN
VV
+
=⋅
+
(14
)
where VDD
* is the nominal value of the supply voltage and VFA
is the forward-voltage drop of DDD as defined in Figure 6.
Since VDD increases as the output load increases, it is proper
to set VDD at 3~5V higher than VDD UVLO level (8V) to
avoid the over-voltage protection condition during the peak
load operation.
Figure 6. Simplified Transformer Diagram
(Design
Example)
Assuming the diode forward-
voltage drop is 0.5V, the turn ratio is obtained as:
100
18.18
50.5
RO
P
SO
F
V
N
n
NV
V
==
=
=
++
Then, determine the proper integer for NS, such that the
resulting NP is larger than NP
min as:
min
8,
146
SP
S
P
NN
n N
N
== ⋅
=
>
Setting VDD
*
as 15V, the number of turns for the
auxiliary winding is obtained as:
*
15 1.2
824
50.5
+
+
=
⋅=
⋅ =
++
DD
FA
AS
OF
VV
NN
VV
[STEP-8] Determine the Wire Diameter for Each Winding
Based on the RMS Current of Winding
The maximum RMS current of the secondary winding is
obtained as:
1
RMS
RMS
MAX
SEC
DS
MAX
D
In I
D
=⋅
(15)
The current density is typically 3~5A/mm
2 when the wire is
long (>1m). When the wire is short with a small number of
turns, a current density of 5~10A/mm
2 is also acceptable.
Avoid using wire with a diameter larger than 1mm to avoid
severe eddy current losses as well as to make winding easier.
For high-current output, it is better to use parallel windings
with multiple strands of thinner wire to minimize skin effect.
(Design Example)
The RMS current of primary-side
winding is obtained from step 4 as 0.36A. The RMS
current of secondary-side winding is calculated as:
1
10.47
18.18 0.36
6.9
0.47
RMS
RMS
MAX
SEC
DS
MAX
D
In I
D
A
=⋅
=⋅
=
0.3mm (5A/mm
2) and 0.65mm×2 (10A/mm2) diameter
wires are selected for primary and secondary windings,
respectively.
[STEP-9] Choose the Rectifier Diode in the Secondary
Side Based on the Voltage and Current Ratings
The maximum reverse voltage and the RMS current of the
rectifier diode are obtained as:
MAX
IN
DO
O
V
VV
n
=+
(16)
1
RMS
RMS
MAX
DO
DS
MAX
D
In I
D
=⋅
(17)


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