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FAN5355UC03X Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FAN5355UC03X Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 26 page © 2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FAN5355 • Rev. 1.0.6 Electrical Specifications VIN = 3.6V, EN = VIN, VSEL = VIN, SYNC = GND, VSEL0(6) bit = 1, CONTROL2[4:3] = 00. TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = 25°C. Circuit and components according to Figure 1. Symbol Parameter Conditions Min. Typ. Max. Units Power Supplies VIN Input Voltage Range 2.7 5.5 V IQ Quiescent Current IO = 0mA, PFM Mode 37 50 μA IO = 0mA, 3MHz PWM Mode 4.8 mA ISD Shutdown Supply Current EN = GND 0.1 2.0 μA EN = VIN, EN_DCDC bit = 0, SDA = SCL = VIN 0.1 2.0 VUVLO Under-Voltage Lockout Threshold VIN Rising 2.40 2.60 V VIN Falling 2.00 2.15 2.30 V VUVHYST Under-Voltage Lockout Hysteresis 200 250 300 mV ENABLE, VSEL, SDA, SCL, SYNC VIH HIGH-Level Input Voltage 1.2 V VIL LOW-Level Input Voltage 0.4 V IIN Input Bias Current Input tied to GND or VIN 0.01 1.00 μA Power Switch and Protection RDS(ON)P P-Channel MOSFET On Resistance VIN = 3.6V, CSP Package 145 mΩ VIN = 3.6V, MLP Package 165 VIN = 2.7V, MLP Package 200 ILKGP P-Channel Leakage Current VDS = 6V 1 μA RDS(ON)N N-Channel MOSFET On Resistance VIN = 3.6V, CSP Package 75 mΩ VIN = 3.6V, MLP Package 95 VIN = 2.7V, MLP Package 101 ILKGN N-Channel Leakage Current VDS = 6V 1 μA RDIS Discharge Resistor for Power-Down Sequence Options 03 and 06 60 120 Ω ILIMPK P-MOS Current Limit 2.7V ≤ VIN ≤ 4.2V, Options 00 and 02 1150 1350 1600 mA 2.7V ≤ VIN ≤ 5.5V, Options 00 and 02 1050 1350 1600 2.7V ≤ VIN ≤ 4.2V, Options 03 and 06 1350 1550 1800 2.7V ≤ VIN ≤ 5.5V, Options 03 and 06 1250 1550 1800 TLIMIT Thermal Shutdown 150 °C THYST Thermal Shutdown Hysteresis 20 °C Frequency Control fSW Oscillator Frequency 2.65 3.00 3.35 MHz fSYNC Synchronization Range 2.7 3.0 3.3 MHz DSYNC Synchronization Duty Cycle 20 80 % Continued on the following page… |
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