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BUJ303A Datasheet(PDF) 6 Page - NXP Semiconductors

No. de pieza BUJ303A
Descripción Electrónicos  NPN power transistor Low thermal resistance Fast switching
Download  14 Pages
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Fabricante Electrónico  NXP [NXP Semiconductors]
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BUJ303A Datasheet(HTML) 6 Page - NXP Semiconductors

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BUJ303A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 3 May 2011
6 of 14
NXP Semiconductors
BUJ303A
NPN power transistor
6.
Characteristics
[1]
Measured with half-sine wave voltage (curve tracer).
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
ICES
collector-emitter cut-off
current
VBE =0V; VCE = 1000 V; Tmb =25 °C [1] --1
mA
VBE =0V; VCE = 1000 V; Tj =125 °C
[1]
--2
mA
ICBO
collector-base cut-off current VCB = 1000 V; IE =0A; Tmb =25°C
[1]
--1
mA
ICEO
collector-emitter cut-off
current
VCE =500 V; IB =0A; Tmb =25 °C
[1]
--0.1
mA
IEBO
emitter-base cut-off current
VEB =9V; IC =0A; Tmb = 25 °C
--0.1
mA
VCEOsus
collector-emitter sustaining
voltage
IB =0A; IC = 100 mA; LC =25mH;
Tmb =25°C; see Figure 6;
see Figure 7
500
-
-
V
VCEsat
collector-emitter saturation
voltage
IC =3A; IB = 0.6 A; Tmb =25°C;
see Figure 8; see Figure 9
-
0.25
1.5
V
VBEsat
base-emitter saturation
voltage
IC =3A; IB = 0.6 A; Tmb =25°C;
see Figure 10
-
0.97
1.3
V
hFE
DC current gain
IC =5mA; VCE =5V; Tmb =25°C;
see Figure 11
10
22
35
IC =500 mA; VCE =5V; Tmb =25°C;
see Figure 11
14
25
35
hFEsat
DC saturation current gain
IC =2.5 A; VCE =5V; Tmb =25°C;
see Figure 11
10
13.5
17
IC =3A; VCE =5V; Tmb =25°C;
see Figure 11
-12
-
Dynamic characteristics
ton
turn-on time
IC =2.5 A; IBon = 0.5 A; IBoff =-0.5A;
RL =75 Ω; VBB =-4V; Tmb =25°C;
resistive load; see Figure 12;
see Figure 13
-0.5
0.7
µs
ts
storage time
-
3.3
4
µs
IC =2.5 A; IBon = 0.5 A; VBB =-5V;
LB =1 µH; Tmb = 25 °C; inductive
load; see Figure 14; see Figure 15
-1.4
1.6
µs
IC =2.5 A; IBon = 0.5 A; VBB =-5V;
LB =1 µH; Tj = 100 °C; inductive load;
see Figure 14; see Figure 15
-1.7
1.9
µs
tf
fall time
IC =2.5 A; IBon = 0.5 A; IBoff =-0.5A;
RL =75 Ω; VBB =-4V; Tmb =25°C;
resistive load; see Figure 12;
see Figure 13
-
0.33
0.45
µs
IC =2.5 A; IBon = 0.5 A; VBB =-5V;
LB =1 µH; Tmb = 25 °C; inductive
load; see Figure 14; see Figure 15
-
145
160
ns
IC =2.5 A; IBon = 0.5 A; VBB =-5V;
LB =1 µH; Tj = 100 °C; inductive load;
see Figure 14; see Figure 15
-
160
200
ns


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