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BUJ303A Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUJ303A Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BUJ303A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 — 3 May 2011 6 of 14 NXP Semiconductors BUJ303A NPN power transistor 6. Characteristics [1] Measured with half-sine wave voltage (curve tracer). Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics ICES collector-emitter cut-off current VBE =0V; VCE = 1000 V; Tmb =25 °C [1] --1 mA VBE =0V; VCE = 1000 V; Tj =125 °C [1] --2 mA ICBO collector-base cut-off current VCB = 1000 V; IE =0A; Tmb =25°C [1] --1 mA ICEO collector-emitter cut-off current VCE =500 V; IB =0A; Tmb =25 °C [1] --0.1 mA IEBO emitter-base cut-off current VEB =9V; IC =0A; Tmb = 25 °C --0.1 mA VCEOsus collector-emitter sustaining voltage IB =0A; IC = 100 mA; LC =25mH; Tmb =25°C; see Figure 6; see Figure 7 500 - - V VCEsat collector-emitter saturation voltage IC =3A; IB = 0.6 A; Tmb =25°C; see Figure 8; see Figure 9 - 0.25 1.5 V VBEsat base-emitter saturation voltage IC =3A; IB = 0.6 A; Tmb =25°C; see Figure 10 - 0.97 1.3 V hFE DC current gain IC =5mA; VCE =5V; Tmb =25°C; see Figure 11 10 22 35 IC =500 mA; VCE =5V; Tmb =25°C; see Figure 11 14 25 35 hFEsat DC saturation current gain IC =2.5 A; VCE =5V; Tmb =25°C; see Figure 11 10 13.5 17 IC =3A; VCE =5V; Tmb =25°C; see Figure 11 -12 - Dynamic characteristics ton turn-on time IC =2.5 A; IBon = 0.5 A; IBoff =-0.5A; RL =75 Ω; VBB =-4V; Tmb =25°C; resistive load; see Figure 12; see Figure 13 -0.5 0.7 µs ts storage time - 3.3 4 µs IC =2.5 A; IBon = 0.5 A; VBB =-5V; LB =1 µH; Tmb = 25 °C; inductive load; see Figure 14; see Figure 15 -1.4 1.6 µs IC =2.5 A; IBon = 0.5 A; VBB =-5V; LB =1 µH; Tj = 100 °C; inductive load; see Figure 14; see Figure 15 -1.7 1.9 µs tf fall time IC =2.5 A; IBon = 0.5 A; IBoff =-0.5A; RL =75 Ω; VBB =-4V; Tmb =25°C; resistive load; see Figure 12; see Figure 13 - 0.33 0.45 µs IC =2.5 A; IBon = 0.5 A; VBB =-5V; LB =1 µH; Tmb = 25 °C; inductive load; see Figure 14; see Figure 15 - 145 160 ns IC =2.5 A; IBon = 0.5 A; VBB =-5V; LB =1 µH; Tj = 100 °C; inductive load; see Figure 14; see Figure 15 - 160 200 ns |
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