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BF998R Datasheet(PDF) 1 Page - Infineon Technologies AG

No. de pieza BF998R
Descripción Electrónicos  Silicon N_Channel MOSFET Tetrode
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Fabricante Electrónico  INFINEON [Infineon Technologies AG]
Página de inicio  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BF998R Datasheet(HTML) 1 Page - Infineon Technologies AG

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2007-04-20
1
BF998...
Silicon N_Channel MOSFET Tetrode
• Short-channel transistor
with high S / C quality factor
• For low-noise, gain-controlled
input stage up to 1 GHz
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
Marking
BF998
BF998R
SOT143
SOT143R
1=S
1=D
2=D
2=S
3=G2
3=G1
4=G1
4=G2
-
-
-
-
MOs
MRs
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source voltage
VDS
12
V
Continuous drain current
ID
30
mA
Gate 1/ gate 2-source current
±I
G1/2SM
10
Total power dissipation
TS ≤ 76 °C, BF998, BF998R
Ptot
200
Storage temperature
Tstg
-55 ... 150
°C
Channel temperature
Tch
150
Thermal Resistance
Parameter
Symbol
Value
Unit
Channel - soldering point2), BF998, BF998R
Rthchs
≤ 370
K/W
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance


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