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LS4119 Datasheet(PDF) 1 Page - Micross Components

No. de pieza LS4119
Descripción Electrónicos  Ultra-High Input Impedance N-Channel JFET
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Fabricante Electrónico  MICROSS [Micross Components]
Página de inicio  http://www.micross.com
Logo MICROSS - Micross Components

LS4119 Datasheet(HTML) 1 Page - Micross Components

  LS4119 Datasheet HTML 1Page - Micross Components  
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX 2N4119 
LOW POWER 
IDSS<90 µA  
MINIMUM CIRCUIT LOADING 
IGSS<10 pA 
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +175°C 
Operating Junction Temperature ‐55°C to +150°C 
Maximum Power Dissipation 
Continuous Power Dissipation  
300mW 
MAXIMUM CURRENT
Gate Current (Note 1) 
50mA 
MAXIMUM VOLTAGES 
Gate to Drain or Gate to Source (Note 2) ‐40V 
  
 
LS4119 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
BVGSS 
Gate to Source Breakdown Voltage ‐40 
‐‐ 
‐‐ 
IG = ‐1µA,   VDS = 0V 
VGS(off) 
Gate to Source Cutoff Voltage ‐2 
‐‐ 
‐6 
                  VDS = 10V,   ID = 1nA 
IDSS 
Gate to Source Saturation Current 
0.20 
‐‐ 
0.60 
mA 
VDS = 10V,   VGS = 0V 
IGSS 
Gate Leakage Current 
‐‐ 
‐‐ 
‐10 
pA 
VGS = ‐20V,  VDS = 0V 
‐‐ 
‐‐ 
‐25 
VGS = ‐20V,  VDS = 0V,  150°C 
gfs 
Forward Transconductance(Note 3) 
100 
‐‐ 
330 
µmho 
VDS = 10V,   VGS = 0V,   f = 1kHz 
 
gos 
Output Conductance 
‐‐ 
‐‐ 
10 
Ciss 
Input Capacitance 
‐‐ 
‐‐ 
pF 
VDS = 10V,   VGS = 0V,   f = 1MHz 
Crss 
Reverse Transfer Capacitance 
‐‐ 
‐‐ 
1.5 
  
 
 
 
 
 
  
 
 
 
 
 
 
NOTES 
1 . Absolute maximum ratings are limiting values above which LS4119 serviceability may be impaired.  
2.  Due to symmetrical geometry, these units may be operated with source and drain leads interchanged 
3. This parameter is measured during a 2ms interval 100ms after power is applied.  (Not a JEDEC condition.) 
The LS4119 is an Ultra-High Input Impedance N-Channel JFET
LS4119
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N4119
Micross Components Europe
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Available Packages:
LS4119 in TO-92
LS4119 in bare die.
Please contact Micross for full
package and die dimensions
LS4119 Benefits:
Insignificant Signal Loss/Error Voltage
with High-Impedance Source
Low Power Consumption (Battery)
Maximum Signal Output, Low Noise
High Sensitivity to Low-Level Signals
The LS4119 provides ultra-high input impedance. The
device is specified with a 10-pA limit and is ideal for use
as a high-impedance sensitive front-end amplifier.
LS4119 Applications:
High-Impedance Transducer
Smoke Detector Input
Infrared Detector Amplifier
Precision Test Equipment
TO-92 (Bottom View)


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