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LS132_TO-78 Datasheet(PDF) 1 Page - Micross Components

No. de pieza LS132_TO-78
Descripción Electrónicos  MONOLITHIC DUAL NPN TRANSISTOR
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Fabricante Electrónico  MICROSS [Micross Components]
Página de inicio  http://www.micross.com
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LS132_TO-78 Datasheet(HTML) 1 Page - Micross Components

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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES 
Direct Replacement for INTERSIL IT132 
HIGH  hFE @ LOW CURRENT ≥ 80 @ 10µA 
OUTPUT CAPACITANCE ≤ 2.0pF 
VBE tracking
≤ 20µV°C 
ABSOLUTE MAXIMUM RATINGS 
1 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +200°C 
Operating Junction Temperature ‐55°C to +150°C 
Maximum Power Dissipation 
Continuous Power Dissipation (One side) 
250mW 
Continuous Power Dissipation (Both sides) 
500mW 
Linear Derating factor (One side) 
2.3mW/°C 
Linear Derating factor (Both sides) 
4.3mW/°C 
Maximum Currents 
Collector Current 
10mA 
  
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP 
MAX 
UNITS 
CONDITIONS 
|VBE1 – VBE2 
Base Emitter Voltage Differential 
‐‐ 
‐‐ 
mV 
I= 10µA, VCE = 5V 
∆|(VBE1 – VBE2)| / ∆T 
 
Base Emitter Voltage Differential 
Change with Temperature 
‐‐ 
‐‐ 
20 
µV/°C 
IC = 10µA, VCE = 5V 
TA = ‐55°C to +125°C 
|IB1 – IB2 | 
Base Current Differential 
‐‐ 
‐‐ 
25 
nA 
IC = 10µA, VCE = 5V 
 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
TYP. 
MAX. 
UNITS 
CONDITIONS 
BVCBO 
Collector to Base Voltage 
45 
‐‐ 
‐‐ 
IC = 10µA, IE = 0 
BVCEO 
Collector to Emitter Voltage 
45 
‐‐ 
‐‐ 
I= 10µA, I= 0 
BVEBO 
Emitter‐Base Breakdown Voltage 
6.2 
‐‐ 
‐‐ 
I= 10µA, I= 0
2 
BVCCO 
Collector to Collector Voltage 
60 
‐‐ 
‐‐ 
I= 10µA, I= 0 
hFE 
DC Current Gain 
80 
‐‐ 
‐‐ 
 
I= 10µA, VCE = 5V 
100 
‐‐ 
‐‐ 
 
I= 1.0mA, VCE = 5V 
VCE(SAT) 
Collector Saturation Voltage 
‐‐ 
‐‐ 
0.5 
I= 0.5mA, I= 0.05mA 
IEBO 
Emitter Cutoff Current 
‐‐ 
‐‐ 
nA 
I= 0, VEB = 3V 
ICBO 
Collector Cutoff Current 
‐‐ 
‐‐ 
nA 
I= 0, VCB = 45V 
COBO 
Output Capacitance 
‐‐ 
‐‐ 
pF 
I= 0, VCB = 5V 
CC1C2 
Collector to Collector Capacitance 
‐‐ 
‐‐ 
pF 
VCC = 0V 
IC1C2 
Collector to Collector Leakage Current 
‐‐ 
‐‐ 
10 
nA 
VCC = ±60V 
fT 
Current Gain Bandwidth Product 
110 
‐‐ 
‐‐ 
MHz 
I= 1mA, VCE = 5V 
NF 
Narrow Band Noise Figure 
‐‐ 
‐‐ 
dB 
I= 100µA,  VCE = 5V, BW=200Hz, RG= 10KΩ, 
f = 1KHz 
Notes: 
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. 
 
LS132
MONOLITHIC DUAL
PNP TRANSISTOR
LS132 Features:
High hfe at low current
Tight matching
Tight VBE tracking
Low Output Capacitance
The LS132 is a monolithic pair of PNP transistors
mounted in a single TO-78 package. The monolithic
dual chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The LS132 is a direct replacement for discontinued
Intersil IT132.
The hermetically sealed TO-78 is well suited for hi-rel
and harsh environment applications.
(See Packaging Information).
Linear Systems replaces discontinued Intersil IT132
Available Packages:
LS132 in TO-78
LS132 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
TO-78 (Bottom View)


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