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BUZ73ALH Datasheet(PDF) 1 Page - Infineon Technologies AG

No. de pieza BUZ73ALH
Descripción Electrónicos  SIPMOS Power Transistor
Download  10 Pages
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Fabricante Electrónico  INFINEON [Infineon Technologies AG]
Página de inicio  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BUZ73ALH Datasheet(HTML) 1 Page - Infineon Technologies AG

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Rev. 2.4
Page 1
2009-11-10
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Pb-free
BUZ 73 AL H
200 V
5.5 A
0.6
Ω
PG-TO220-3
Yes
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
TC = 37 ˚C
ID
5.5
A
Pulsed drain current
TC = 25 ˚C
IDpuls
22
Avalanche current,limited by Tjmax
IAR
7
Avalanche energy,periodic limited by Tjmax
EAR
6.5
mJ
Avalanche energy, single pulse
ID = 7 A, VDD = 50 V, RGS = 25 Ω
L
= 3.67 mH, Tj = 25 ˚C
EAS
120
Gate source voltage
VGS
± 20
V
ESD-Sensitivity HBM as per MIL-STD 883
Class 1
Power dissipation
TC = 25 ˚C
Ptot
40
W
Operating temperature
Tj
-55 ... + 150
˚C
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip case
RthJC
≤ 3.1
K/W
Thermal resistance, chip to ambient
RthJA
75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
BUZ 73AL H
. Halogen-free according to IEC61249-2-21


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