2N3810DCSM datasheet(3/4 Pages) SEME-LAB | DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

3 page

LAB

SEME

2N3810DCSM

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 1/95

ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)

NOTES

1) Terminals not under test are open circuited under all test conditions.

2) The lower of the two readings is taken as hFE1.

3) Average noise figure is measured in an amplifier with response down 3dB at 10Hz and 10 kHz and a high frequency

rolloff of 6dB / octave.

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

—

0.9

0.8

hFE1

Static Forward Current Gain

hFE2

Balance Ratio

|VBE1 – VBE2|

Base – Emitter Voltage

Differential

∆(V

BE1 – VBE2)∆TA|

Base – Emitter Voltage

Differential

VCE = –5V

IC = –100µA

See Note 2.

VCE = –5V

IC = –10µA to –10mA

VCE = –5V

IC = –100µA

VCE = –5V

IC = –100µA

TA1 = 25°C

TA2 = –55°C

VCE = –5V

IC = –100µA

TA1 = 25°C

TA2 = 125°C

TRANSISTOR MATCHING CHARACTERISTICS

OPERATING CHARACTERISTICS (Tamb = 25°C unless otherwise stated)

Parameter

Test Conditions 1

Min.

Typ.

Max.

Unit

2.5

3.5

Spot Noise Figure

Average Noise Figure

VCE = –10V

IC = –100µA

RG = 3kΩ

f = 100Hz

Noise Bandwidth = 20Hz

VCE = –10V

IC = –100µA

RG = 3kΩ

f = 1kHz

Noise Bandwidth = 200Hz

VCE = –10V

IC = –100µA

RG = 3kΩ

f = 10kHz

Noise Bandwidth = 2kHz

VCE = –10V

IC = –100µA

RG = 3kΩ

Noise Bandwidth = 15.7kHz

See Note 3.

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