PZTA14 datasheet(3/6 Pages) INFINEON

No. de pieza	PZTA14

Descripción Electrónicos	NPN Silicon Darlington Transistor

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Fabricante Electrónico	INFINEON [Infineon Technologies AG]

Página de inicio	http://www.infineon.com

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3 / 6 page

2008-03-07

3

PZTA14

DC current gain hFE = ƒ(IC)

VCE = 5 V

10

EHP00719

PZTA 13/14

-1

3

10

mA

3

10

6

10

5

10

0

10

1

10

4

C

FE

h

Ι

2

10

5

10

˚C

125

5

25 ˚C

-55 ˚C

Collector-emitter saturation voltage

IC = ƒ(VCEsat), hFE = 1000

0

10

EHP00720

PZTA 13/14

CEsat

V

1.5

0

3

10

Ι

C

mA

0.5

1.0

1

10

2

10

˚C

V

5

150

25 ˚C

-50 ˚C

Base-emitter saturation voltage

IC = ƒ(VBEsat), hFE = 1000

0

10

EHP00721

PZTA 13/14

BEsat

V

3.0

0

3

10

Ι

C

mA

1.0

2.0

1

10

2

10

˚C

V

5

150

25 ˚C

-50 ˚C

Collector cutoff current ICBO = ƒ(TA)

VCBO = 30 V

10

0

50

100

150

PZTA 13/14

EHP00718

T

A

Ι

CB0

˚C

10

4

3

2

1

0

5

max

typ

nA

Número de pieza similar - PZTA14

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NXP Semiconductors	PZTA14	44Kb / 8P	NPN Darlington transistor 1999 Apr 14
Infineon Technologies A...	PZTA14	524Kb / 6P	NPN Silicon Darlington Transistor 2011-10-04
Siemens Semiconductor G...	PZTA14	139Kb / 4P	NPN Silicon Darlington Transistors
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PZTA14 Datasheet(PDF) 3 Page - Infineon Technologies AG

PZTA14 Datasheet(HTML) 3 Page - Infineon Technologies AG

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