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2SC1906 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC1906 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page  2SC1906 0.05 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 24-Feb-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Transition Frequency APPLICATIONS VHF Amplifier Mixer, Local Oscillator ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 19 V Emitter to Base Voltage VEBO 2 V Collector Current - Continuous IC 50 mA Collector Power Dissipation PC 300 mW Thermal Resistance From Junction To Ambient RθJA 416 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 30 - - V IC=0.01mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 19 - - V IC=3mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 2 - - V IE=0.01A, IC=0 Collector Cut – Off Current ICBO - - 0.5 μA VCB=10V, IE=0 Emitter Cut – Off Current IEBO - - 0.5 μA VEB=2V, IC=0 DC Current Gain hFE 40 - - VCE=10V, IC=10mA Collector to Emitter Saturation Voltage VCE(sat) - - 1 V IC=20mA, IB=4mA Transition Frequency fT 600 - - MHz VCE=10V, IC=10mA Collector Output Capacitance Cob - - 2 pF VCB=10V, IE=0, f=1MHz Emitter Collector Base TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 |
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