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2N5114 Datasheet(PDF) 1 Page - Microsemi Corporation |
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2N5114 Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 2 page TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 T4-LDS-0006 Rev. 1 (063387) Page 1 of 2 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol All Devices Unit Gate-Source Voltage (1) VGS 30 Vdc Drain-Source Voltage (1) VDS 30 Vdc Drain-Gate Voltage VDG 30 Vdc Gate Current IG 50 mAdc Power Dissipation TA = +25°C (2) PT 0.500 W Storage Temperature Range Tstg -65 to +200 °C (1) Symmetrical geometry allows operation of those units with source / drain leads interchanged. (2) Derate linearly 3.0 mW/ °C for T A > 25°C. ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit Gate-Source Breakdown Voltage VDS = 0, IG = 1.0 μA dc V(BR)GSS 30 Vdc Drain-Source “On” State Voltage VGS = 0V dc, ID = -15mA dc VGS = 0V dc, ID = -7.0mA dc VGS = 0V dc, ID = -3.0mA dc 2N5114 2N5115 2N5116 VDS(on) -1.3 -0.8 -0.6 Vdc Gate Reverse Current VDS = 0, VGS = 20V dc IGSS 500 pAdc Drain Current Cutoff VGS = 12V dc, VDS = -15V dc VGS = 7.0V dc, VDS = -15V dc VGS = 5.0V dc, VDS = -15V dc 2N5114 2N5115 2N5116 ID(off) -500 -500 -500 pAdc Zero Gate Voltage Drain Current VGS = 0, VDS = -18V dc VGS = 0, VDS = -15V dc VGS = 0, VDS = -15V dc 2N5114 2N5115 2N5116 IDSS -30 -15 -5.0 -90 -60 -25 mAdc Gate-Source Cutoff VDS = -15, ID = -1.0nA dc VDS = -15, ID = -1.0nA dc VDS = -15, ID = -1.0nA dc 2N5114 2N5115 2N5116 VGS(off) 5.0 3.0 1.0 10 6.0 4.0 Vdc TO-18 (TO-206AA) |
Número de pieza similar - 2N5114_08 |
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Descripción similar - 2N5114_08 |
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