SS8550W datasheet(1/2 Pages) SECOS

No. de pieza	SS8550W

Descripción Electrónicos	PNP Silicon General Purpose Transistor

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Fabricante Electrónico	SECOS [SeCoS Halbleitertechnologie GmbH]

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SS8550W

PNP Silicon

General Purpose Transistor

Power dissipation

PCM : 0.2 W

Collector Current

ICM : -1.5 A

Collector-base voltage

FEATURES

Collector

3

1

Base

2

Emitter

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

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Elektronische Bauelemente

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 100

μA， IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=-0.1mA

， IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100

μA，IC=0

-5

V

Collector cut-off current

ICBO

VCB=-40 V ,

IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE=-20V ,

IB=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V ,

IC=0

-0.1

μA

HFE(1)

VCE=-1V,

IC=-100m A

120

350

DC current gain

HFE(2)

VCE=-1V,

IC=-800mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=-800 mA, IB= -80m A

-0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=-800 mA, IB= -80m A

-1.2

V

Transition frequency

fT

VCE=-10V,

IC=-50mA

f=30MHz

100

MHz

CLASSIFICATION OF hFE(1)

Rank

L

H

Range

120-200

200-350

1

2

ELECTRICAL CHARACTERISTICS ( Tamp.=25

OC unless otherwise specified)

V(BR)CBO : - 40 V

Operating & storage junction temperature

Tj, Tstg : - 55

O

C ~ + 150

O

C

3

Marking : Y2

output capacitance

(VCB=-10V,IE=0,f=1MHz)

20

01-Jun-2002 Rev. A

Page 1 of 2

Dim

Min

Max

A

1.800

2.200

B

1.150

1.350

C

0.800

1.000

D

0.300

0.400

G

1.200

1.400

H

0.000

0.100

J

0.100

0.250

K

0.350

0.500

L

0.590

0.720

S

2.000

2.400

V

0.280

0.420

All Dimension in mm

SOT-323

RoHS Compliant Product

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