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KF8N60F Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KF8N60F Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
1 / 7 page 2011. 1. 27 1/7 SEMICONDUCTOR TECHNICAL DATA KF8N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR Revision No : 0 General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES ・VDSS=600V, ID=8A ・Drain-Source ON Resistance : RDS(ON)(Max)=1.05Ω @VGS=10V ・Qg(typ.)= 22nC MAXIMUM RATING (Tc=25 ℃) * : Drain current limited by maximum junction temperature. CHARACTERISTIC SYMBOL RATING UNIT KF8N60P KF8N60F Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Drain Current @TC=25℃ ID 8 8* A @TC=100℃ 5 5* Pulsed (Note1) IDP 18 18* Single Pulsed Avalanche Energy (Note 2) EAS 230 mJ Repetitive Avalanche Energy (Note 1) EAR 14.7 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Drain Power Dissipation Tc=25 ℃ PD 160 52 W Derate above 25 ℃ 1.28 0.42 W/ ℃ Maximum Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ~150 ℃ Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 0.78 2.4 ℃/W Thermal Resistance, Junction-to-Ambient RthJA 62.5 62.5 ℃/W G D S PIN CONNECTION DIM MILLIMETERS TO-220AB 1.46 A B C D E F G H J K M N O 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 MAX 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 A F B J G K M L L E I I O C H NN Q D Q P P 1. GATE 2. DRAIN 3. SOURCE 12 3 1. GATE 2. DRAIN 3. SOURCE TO-220IS (1) A A B C C D D E E F G H H 1.47 MAX 1.47 MAX J K L M L N NN O Q R R 12 3 M DIM MILLIMETERS 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ KF8N60P KF8N60F |
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