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FMI16N60E Datasheet(PDF) 3 Page - Actel Corporation |
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FMI16N60E Datasheet(HTML) 3 Page - Actel Corporation |
3 / 5 page 33 FUJI POWER MOSFET FMI16N60E -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tch [° C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 typ. max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A Tch [°C] 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=16A,Tch=25°C 480V 300V Vcc= 120V 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 VSD [V] ID [A] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 10 -1 10 0 10 1 10 2 100 101 102 103 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10Ω td(on) tr tf td(off) 10 -1 10 0 10 1 10 2 10 3 100 101 102 10 3 10 4 VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss µ |
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