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FML13N60ES Datasheet(PDF) 1 Page - Fuji Electric |
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FML13N60ES Datasheet(HTML) 1 Page - Fuji Electric |
1 / 5 page 1 FML13N60ES FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 600 V VDSX 600 V VGS = -30V Continuous Drain Current ID ±13 A Pulsed Drain Current IDP ±52 A Gate-Source Voltage VGS ±30 V Repetitive and Non-Repetitive Maximum Avalanche Current IAR 13 A Note*1 Non-Repetitive Maximum Avalanche Energy EAS 471.5 mJ Note*2 Repetitive Maximum Avalanche Energy EAR 22.5 mJ Note*3 Peak Diode Recovery dV/dt dV/dt 4.7 kV/µs Note*4 Peak Diode Recovery -di/dt -di/dt 100 A/µs Note*5 Maximum Power Dissipation PD 1.44 W Ta=25°C 225 Tc=25°C Operating and Storage Temperature range Tch 150 °C Tstg -55 to +150 °C Outline Drawings [mm] Equivalent circuit schematic Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Symbol Conditions min. typ. max. Unit Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 600 - - V Gate Threshold Voltage VGS (th) ID=250µA, VDS=VGS 3.7 4.2 4.7 V Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V Tch=25°C - - 25 µA VDS=480V, VGS=0V Tch=125°C - - 250 Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V - 10 100 nA Drain-Source On-State Resistance RDS (on) ID=6.5A, VGS=10V - 0.50 0.58 Ω Forward Transconductance gfs ID=6.5A, VDS=25V 5 10 - S Input Capacitance Ciss VDS=25V VGS=0V f=1MHz - 1700 2550 pF Output Capacitance Coss - 190 285 Reverse Transfer Capacitance Crss - 10 15 Turn-On Time td(on) Vcc=300V VGS=10V ID=6.5A RG=18Ω - 38 57 ns tr - 24 36 Turn-Off Time td(off) - 86 129 tf - 16 24 Total Gate Charge QG Vcc=300V ID=13A VGS=10V - 48 56 nC Gate-Source Charge QGS - 16 24 Drain-Source Crossover Charge QSW - 7 10.5 Gate-Drain Charge QGD - 16 24 Avalanche Capability IAV L=2.36mH, Tch=25°C 13 - - A Diode Forward On-Voltage VSD IF=13A, VGS=0V, Tch=25°C - 0.90 1.08 V Reverse Recovery Time trr IF=13A, VGS=0V -di/dt=100A/µs, Tch=25°C - 0.7 - µS Reverse Recovery Charge Qrr - 8 - µC 1 2 4 3 D S2 G S1 0.4±0.1 9.0± 0.2 7.0±0.2 2.0 2.5 2.0 1.5 1.0±0.2 1.0±0.2 3.6±0.2 (4.0) (0.8) (3.2) 1 2 3 Solder Plating 4 TFP Super FAP-E3 series http://www.fujisemi.com Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS=5A, L=33.8mH, Vcc=50V, RG=10Ω, EAS limited by maximum channel temperature and avalanche current. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. Thermal Characteristics Description Symbol Test Conditions min. typ. max. Unit Thermal resistance Rth (ch-c) Channel to case 0.56 °C/W Rth (ch-a) Channel to Ambient 87 °C/W Rth (ch-a) Channel to Ambient Note*6 52 °C/W Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : IF≤-ID, dv/dt=6.3kV/µs, Vcc≤BVDSS, Tch≤150°C. Note *6 : Surface mounted on 1000mm2, t=1.6mm FR-4 PCB (Drain pad area : 500mm2) |
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