1

FML13N60ES

FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

Features

Maintains both low power loss and low noise

More controllable switching dv/dt by gate resistance

Narrow band of the gate threshold voltage (4.2±0.5V)

High avalanche durability

Applications

Switching regulators

UPS (Uninterruptible Power Supply)

DC-DC converters

Maximum Ratings and Characteristics

Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)

Description

Symbol

Characteristics

Unit

Remarks

Drain-Source Voltage

600

V

600

V

Continuous Drain Current

±13

A

Pulsed Drain Current

±52

A

Gate-Source Voltage

±30

V

Repetitive and Non-Repetitive Maximum Avalanche Current

13

A

Note*1

Non-Repetitive Maximum Avalanche Energy

471.5

mJ

Note*2

Repetitive Maximum Avalanche Energy

22.5

mJ

Note*3

Peak Diode Recovery dV/dt

dV/dt

4.7

kV/µs

Note*4

Peak Diode Recovery -di/dt

-di/dt

100

A/µs

Note*5

Maximum Power Dissipation

1.44

W

Ta=25°C

225

Tc=25°C

Operating and Storage Temperature range

150

°C

-55 to +150

°C

Outline Drawings [mm]

Equivalent circuit schematic

Electrical Characteristics at Tc=25°C (unless otherwise specified)

Description

Symbol

Conditions

min.

typ.

max.

Unit

Drain-Source Breakdown Voltage

600

-

-

V

Gate Threshold Voltage

3.7

4.2

4.7

V

Zero Gate Voltage Drain Current

-

-

25

µA

-

-

250

Gate-Source Leakage Current

-

10

100

nA

Drain-Source On-State Resistance

-

0.50

0.58

Ω

Forward Transconductance

5

10

-

S

Input Capacitance

Ciss

f=1MHz

-

1700

2550

pF

Output Capacitance

Coss

-

190

285

Reverse Transfer Capacitance

Crss

-

10

15

Turn-On Time

td(on)

-

38

57

ns

tr

-

24

36

Turn-Off Time

td(off)

-

86

129

tf

-

16

24

Total Gate Charge

-

48

56

nC

Gate-Source Charge

-

16

24

Drain-Source Crossover Charge

-

7

10.5

Gate-Drain Charge

-

16

24

Avalanche Capability

13

-

-

A

Diode Forward On-Voltage

-

0.90

1.08

V

Reverse Recovery Time

trr

-di/dt=100A/µs, Tch=25°C

-

0.7

-

µS

Reverse Recovery Charge

Qrr

-

8

-

µC

1

2

4

3

D

S2

G

S1

0.4±0.1

9.0± 0.2

7.0±0.2

2.0

2.5

2.0

1.5

1.0±0.2

1.0±0.2

3.6±0.2

(4.0)

(0.8)

(3.2)

1

2

3

Solder

Plating

4

TFP

http://www.fujisemi.com

Note *1 : Tch≤150°C

Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.

Thermal Characteristics

Description

Symbol

Test Conditions

min.

typ.

max.

Unit

Thermal resistance

Rth (ch-c)

Channel to case

0.56

°C/W

Rth (ch-a)

Channel to Ambient

87

°C/W

Rth (ch-a)

Channel to Ambient Note*6

52

°C/W