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BD244C Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza BD244C
Descripción Electrónicos  Complementary Silicon Plastic Power Transistors
Download  6 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BD244C Datasheet(HTML) 2 Page - ON Semiconductor

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BD243B, BD243C* (NPN) BD244B, BD244C* (PNP)
http://onsemi.com
2
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
BD243B, BD244B
BD243C, BD244C
VCEO(sus)
80
100
-
-
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
BD243B, BD243C, BD244B, BD244C
ICEO
-
0.7
mAdc
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
BD243B, BD244B
(VCE = 100 Vdc, VEB = 0)
BD243C, BD244C
ICES
-
-
400
400
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
-
1.0
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
30
15
-
-
-
Collector-Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 1.0 Adc)
VCE(sat)
-
1.5
Vdc
Base-Emitter On Voltage
(IC = 6.0 Adc, VCE = 4.0 Vdc)
VBE(on)
-
2.0
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
-
MHz
Small-Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
-
-
1. Pulse Test: Pulsewidth
v 300 ms, Duty Cycle v 2.0%.
2. fT = hfe • ftest


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