BUH50G datasheet(2/8 Pages) ONSEMI

No. de pieza	BUH50G

Descripción Electrónicos	SWITCHMODE NPN Silicon Planar Power Transistor

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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BUH50G

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)

VCEO(sus)

500

Vdc

Collector Cutoff Current (VCE = Rated VCEO, IB = 0)

ICEO

100

mAdc

Collector Cutoff Current

@ TC = 25°C

(VCE = Rated VCES, VEB = 0) @ TC = 125°C

ICES

100

1000

mAdc

Emitter−Cutoff Current (VEB = 9 Vdc, IC = 0)

IEBO

100

mAdc

ON CHARACTERISTICS

Base−Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.33 Adc)

(IC = 2 Adc, IB = 0.66 Adc) 25°C

(IC = 2 Adc, IB = 0.66 Adc) 100°C

VBE(sat)

0.86

0.94

0.85

1.2

1.6

1.5

Vdc

Collector−Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.33 Adc)

@ TC = 25°C

VCE(sat)

0.2

0.5

Vdc

(IC = 2 Adc, IB = 0.66 Adc)

@ TC = 25°C

@ TC = 125°C

0.32

0.29

0.6

0.7

(IC = 3 Adc, IB = 1 Adc)

@ TC = 25°C

0.5

1

DC Current Gain (IC = 1 Adc, VCE = 5 Vdc)

@ TC = 25°C

hFE

7

13

−

DC Current Gain (IC = 2 Adc, VCE = 5 Vdc)

@ TC = 25°C

5

10

−

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

fT

4

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)

Cob

50

100

pF

Input Capacitance (VEB = 8 Vdc)

Cib

850

1200

pF

DYNAMIC SATURATION VOLTAGE

Dynamic Saturation

Voltage:

Determined 1 ms and

3 ms respectively after

rising IB1 reaches

90% of final IB1

IC = 1 A

IB1 = 0.33 A

VCC = 300 V

@ 1 ms

@ TC = 25°C

@ TC = 125°C

VCE(dsat)

1.75

5

V

@ 3 ms

@ TC = 25°C

@ TC = 125°C

0.3

0.5

V

IC = 2 A

IB1 = 0.66 A

VCC = 300 V

@ 1 ms

@ TC = 25°C

@ TC = 125°C

6

14

V

@ 3 ms

@ TC = 25°C

@ TC = 125°C

0.75

4

V

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms)

Turn−on Time

IC = 2 Adc, IB1 = 0.4 Adc

IB2 = 0.4 Adc

VCC = 125 Vdc

@ TC = 25°C

ton

95

250

ns

Turn−off Time

@ TC = 25°C

toff

2.5

3.5

ms

Turn−on Time

IC = 2 Adc, IB1 = 0.4 Adc

IB2 = 1 Adc

VCC = 125 Vdc

@ TC = 25°C

ton

110

250

ns

Turn−off Time

@ TC = 25°C

toff

0.95

2

ms

Turn−on Time

IC = 1 Adc, IB1 = 0.3 Adc

IB2 = 0.3 Adc

VCC = 125 Vdc

@ TC = 25°C

ton

100

200

ns

Turn−off Time

@ TC = 25°C

toff

2.9

3.5

ms

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)

Fall Time

IC = 2 Adc

IB1 = 0.4 Adc

IB2 = 1 Adc

@ TC = 25°C

@ TC = 125°C

tf

80

95

150

ns

Storage Time

@ TC = 25°C

@ TC = 125°C

ts

1.2

1.7

2.5

ms

Crossover Time

@ TC = 25°C

@ TC = 125°C

tc

150

180

300

ns

Fall Time

IC = 2 Adc

IB1 = 0.66 Adc

IB2 = 1 Adc

@ TC = 25°C

@ TC = 125°C

tf

90

100

150

ns

Storage Time

@ TC = 25°C

@ TC = 125°C

ts

1.7

2.5

2.75

ms

Crossover Time

@ TC = 25°C

@ TC = 125°C

tc

190

220

350

ns

Número de pieza similar - BUH50G

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Motorola, Inc	BUH50	478Kb / 10P	POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS
ON Semiconductor	BUH50	478Kb / 10P	POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS

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