SIB437EDKT datasheet(4/8 Pages) VISHAY

No. de pieza	SIB437EDKT

Descripción Electrónicos	P-Channel 8 V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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Document Number: 67402

S11-0235-Rev. A, 14-Feb-11

Vishay Siliconix

SiB437EDKT

New Product

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.8

0.9

1.0

1.1

1.2

1.3

- 50

- 25

0

25

50

75

100

125

150

T

J - Junction Temperature (°C)

V

GS = 1.8 V; ID = 1 A

V

GS = 1.5 V; ID = 0.5 A

V

GS = 1.2 V; ID = 0.5 A

V

GS = 4.5 V; ID = 3 A

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.0

1.0

2.0

3.0

4.0

5.0

V

GS - Gate-to-Source Voltage (V)

I

D = 0.5 A; TJ = 125 °C

I

D = 3 A; TJ = 25 °C

I

D = 3 A; TJ = 125 °C

I

D = 0.5 A; TJ = 25 °C

1000

100

1

0.001

0.01

0.1

10

Pulse (s)

20

10

5

15

0

Soure-Drain Diode Forward Voltage

Threshold Voltage

Safe Operating Area, Junction-to-Ambient

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 150 °C

T

J = 25 °C

0.2

0.3

0.4

0.5

0.6

0.7

- 50

- 25

0

25

50

75

100

125

150

T

J -Temperature (°C)

I

D = 250 μA

0.01

0.1

1

10

100

0.1

1

10

100

V

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 ms

Limited by R

DS(on)*

1 ms

T

Single Pulse

A = 25 °C

BVDSS Limited

10 ms

1 s, 10 s

DC

100 μs

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