Technical Note

2/18

BU9844GUL-W

www.rohm.com

2010.09 - Rev.A

© 2010 ROHM Co., Ltd. All rights reserved.

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Memory cell characteristics (Ta=25℃, Vcc=1.7~5.5V)

Parameter

Limits

Unit

Min

Typ.

Max

Number of data rewrite times

*1

1,000,000

-

-

Times

Data hold years

40

-

-

Years

*1 Not 100% TESTED

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Electrical characteristics

(Unless otherwise specified, Ta=-40~+85℃, Vcc=1.7~5.5V)

Parameter

Symbol

Limits

Unit

Conditions

Min.

Typ.

Max.

“HIGH” input voltage1

0.7Vcc

-

-

V

2.5V≦Vcc≦5.5V

“LOW” Input voltage1

-

-

0.3Vcc

V

2.5V≦Vcc≦5.5V

“HIGH” input voltage2

0.9Vcc

-

-

V

1.7V≦Vcc＜2.5V

“LOW” input voltage2

-

-

0.1Vcc

V

1.7V≦Vcc＜2.5V

“LOW” output voltage1

-

-

0.3

V

“LOW output voltage2

-

-

0.2

V

Input leak current

-1

-

1

μA

Output leak current

-1

-

1

μA

Current consumption

at action

-

-

2.0

mA

Byte write, Page write

-

-

0.5

mA

Random read, Current read,

sequential read

Standby current

-

-

2.0

μA

Vcc=5.5V, SDA·SCL=Vcc,

A2=GND, WP=GND

○

This product is not designed for protection against radioactive rays.