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IRFF9130 Datasheet(PDF) 2 Page - Seme LAB

No. de pieza IRFF9130
Descripción Electrónicos  P-CHANNEL POWER MOSFET
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Fabricante Electrónico  SEME-LAB [Seme LAB]
Página de inicio  http://www.semelab.co.uk
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IRFF9130 Datasheet(HTML) 2 Page - Seme LAB

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P-CHANNEL
POWER MOSET
IRFF9130 / 2N6849
Semelab Limited
Semelab Limited
Semelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 3098
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0
ID = -1.0mA
-100
V
J
T
VDSS
B
Temperature Coefficent of
Breakdown Voltage
Reference
to 25°C
ID = -1.0mA
-0.1
V/°C
VGS = -10V
ID = -4.1A
(3)
0.3
TJ = 125°C
0.54
RDS(on)
Static Drain-Source
On-State Resistance
VGS = -10V
ID = -6.5A
(3)
0.32
VDS = VGS
ID = -250µA
-2
-4
TJ = 125°C
-1.0
VGS(th)
Gate Threshold Voltage
TJ = -55°C
-5
V
gfs
Forward Transconductance
VDS ≥ -5V
I DS = -4.1A
(3)
2.5
3.5
7.5
S(Ʊ)
VGS = 0
VDS = 0.8BVDSS
25
IDSS
Zero Gate Voltage
Drain Current
TJ = 125°C
250
µA
VGS = 20V
100
IGSS
Forward Gate-Source
Leakage
TJ = 125°C
200
VGS = -20V
-100
IGSS
Reverse Gate-Source
Leakage
TJ = 125°C
-200
nA
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VGS = 0
800
Coss
Output Capacitance
VDS = -25V
350
Crss
Reverse Transfer
Capacitance
f = 1.0MHz
125
pF
Qg
(4)
Total Gate Charge
VGS = -10V
34.8
Qgs
(4)
Gate-Source Charge
ID = -6.5A
6.8
Qgd
(4)
Gate-Drain Charge
VDS = 0.5BVDSS
23.1
nC
td(on)
Turn-On Delay Time
60
tr
Rise Time
140
td(off)
Turn-Off Delay Time
140
tf
Fall Time
VDD = -40V
ID = -4.1A
RG = 7.5Ω
140
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
-6.5
ISM
Pulse Source Current
(1)
-25
A
IS = -6.5A
TJ = 25°C
VSD
Diode Forward Voltage
VGS = 0
(4)
-4.3
V
trr
Reverse Recovery Time
IS = -6.5A
TJ = 25°C
250
ns
Qrr
Reverse Recovery Charge
VDD ≤ -50V
di/dt = 100A/
µs
(3)
3
µC


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