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BA682 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BA682 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 3 page Band Switching Diodes BA682, BA683 Vishay Semiconductors Document Number: 85530 For technical questions within your region, please contact one of the following: www.vishay.com Rev. 1.6, 16-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 MECHANICAL DATA Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box FEATURES • Silicon planar diodes • Low dynamic forward resistance • Low diode capacitance • High reverse impedance • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • Band switching in VHF-tuners Note (1) Tamb = 25 °C, unless otherwise specified Note (1) Tamb = 25 °C, unless otherwise specified Note (1) Tamb = 25 °C, unless otherwise specified 94 9371 PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE REMARKS BA682 VR = 35 V, rf at IF 3 mA = max. 0.7 Ω BA682-GS18 or BA682-GS08 Tape and reel BA683 VR = 35 V, rf at IF 3 mA = max. 1.2 Ω BA683-GS18 or BA683-GS08 Tape and reel ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Reverse voltage VR 35 V Forward continuous current IF 100 mA THERMAL CHARACTERISTICS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction to ambient air On PC board 50 mm x 50 mm x 1.6 mm RthJA 500 K/W Junction temperature Tj 150 °C Storage temperature range Tstg - 55 to + 150 °C ELECTRICAL CHARACTERISTICS (1) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA VF 1000 mV Reverse current VR = 20 V IR 50 nA Diode capacitance f = 100 MHz, VR = 1 V CD1 1.5 pF f = 100 MHz, VR = 3 V BA682 CD2 1.25 pF BA683 CD2 1.2 pF Dynamic forward resistance f = 200 MHz, IF = 3 mA BA682 rf1 0.7 Ω BA683 rf1 1.2 Ω f = 200 MHz, IF = 10 mA BA682 rf2 0.5 Ω BA683 rf2 0.9 Ω |
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