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2SC1971 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC1971 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1971 isc Website:www.iscsemi.cn DESCRIPTION ·High Power Gain- : Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage RBE= ∞ 17 V VEBO Emitter-Base Voltage 4 V IC Collector Current 2 A Collector Power Dissipation @TC=25℃ 12.5 PC Collector Power Dissipation @Ta=25℃ 1.5 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 83 ℃/W Rth j-c Thermal Resistance,Junction to Case 10 ℃/W |
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