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2SD1436 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1436 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1436 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞ 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ,IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A, IB= 10mA B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A, IB= 0.1A 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A, IB= 10mA B 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A, IB= 0.1A 3.5 V ICBO Collector Cutoff current VCB= 120V, IE= 0 0.1 mA ICEO Collector Cutoff current VCE= 100V, RBE= ∞ 10 μA hFE DC Current Gain IC= 5A; VCE= 3V 1000 20000 Switching Times ton Turn-On Time 0.8 μs toff Turn-Off Time IC = 5A, IB1 = -IB2= 10mA 4.0 μs isc Website:www.iscsemi.cn |
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