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BDY56 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDY56 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY56 DESCRIPTION ・With TO-3 package ・High current capability ・Fast switching speed APPLICATIONS ・LF large signal power amplification. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A IB Base current 7 A PT Total power dissipation TC=25℃ 117 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.5 ℃/W Fig.1 simplified outline (TO-3) and symbol |
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