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BUT93 Datasheet(Hoja de datos) 2 Page - Inchange Semiconductor Company Limited

No. de Pieza. BUT93
Descripción  isc Silicon NPN Power Transistor
Descarga  2 Pages
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Fabricante  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT93
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 0.1A; IB= 0, L= 125mH
350
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
5
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 0.3A; IB= 30mA
0.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 3A; IB= 750mA
B
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
B
1.1
V
ICES
Collector Cutoff Current
VCE= 600V; VBE= 0
VCE= 600V; VBE= 0; TC=125℃
0.2
1.5
mA
hFE
DC Current Gain
IC= 1A; VCE= 2V
10
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
9
MHz
Switching Times ;Resistive Load
ts
Storage Time
2.0
μs
tf
Fall Time
IC= 1A; IB1= 0.2A; IB2= -0.4A
0.25
μs
isc Website:www.iscsemi.cn




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