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BUT93 Datasheet(Hoja de datos) 1 Page - Inchange Semiconductor Company Limited

No. de Pieza. BUT93
Descripción  isc Silicon NPN Power Transistor
Descarga  2 Pages
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Fabricante  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT93
DESCRIPTION
·High Voltage
·High Speed Switching
·High Power Dissipation
APPLICATIONS
·Designed for switching mode power supply and electronic
ballast applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
600
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
6
A
IB
B
Base Current- Continuous
2
A
PC
Collector Power Dissipation
@TC=25℃
50
W
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.5
℃/W
isc Website:www.iscsemi.cn




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