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IRF530S Datasheet(Hoja de datos) 6 Page - Vishay Siliconix

No. de Pieza. IRF530S
Descripción  Power MOSFET
Descarga  9 Pages
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Fabricante  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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www.vishay.com
Document Number: 91020
6
S11-1046-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF530S, SiHF530S
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
Rg
IAS
0.01
Ω
tp
D.U.T
L
V
DS
+
-
V
DD
10 V
Vary tp to obtain
required IAS
IAS
VDS
VDD
VDS
tp
200
0
40
80
120
160
25
150
125
100
75
50
Starting TJ, Junction Temperature (°C)
Bottom
Top
I
D
5.7 A
9.9 A
14 A
V
DD = 25 V
91020_12c
175
Q
GS
Q
GD
Q
G
VG
Charge
V
GS
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 k
Ω
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-




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