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IRF530S Datasheet(Hoja de datos) 1 Page - Vishay Siliconix

No. de Pieza. IRF530S
Descripción  Power MOSFET
Descarga  9 Pages
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Fabricante  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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Document Number: 91020
www.vishay.com
S11-1046-Rev. C, 30-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
IRF530S, SiHF530S
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 528 μH, Rg = 25 , IAS = 14 A (see fig. 12).
c. ISD  14 A, dI/dt  140 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
VDS (V)
100
RDS(on) ()VGS = 10 V
0.16
Qg (Max.) (nC)
26
Qgs (nC)
5.5
Qgd (nC)
11
Configuration
Single
N-Channel MOSFET
G
D
S
D2PAK (TO-263)
G D
S
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF530S-GE3
SiHF530STRL-GE3a
SiHF530STRR-GE3a
Lead (Pb)-free
IRF530SPbF
IRF530STRLPbFa
IRF530STRRPbFa
SiHF530S-E3
SiHF530STL-E3a
SiHF530STR-E3a
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
14
A
TC = 100 °C
10
Pulsed Drain Currenta
IDM
56
Linear Derating Factor
0.59
W/°C
Linear Derating Factor (PCB Mount)e
0.025
Single Pulse Avalanche Energyb
EAS
69
mJ
Avalanche Currenta
IAR
14
A
Repetitive Avalanche Energya
EAR
8.8
mJ
Maximum Power Dissipation
TC = 25 °C
PD
88
W
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
3.7
Peak Diode Recovery dV/dtc
dV/dt
5.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
* Pb containing terminations are not RoHS compliant, exemptions may apply




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